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preliminary data this is preliminary information on a new product now in deve lopment or undergoing evaluation. details are subject to change without notice. july 2010 doc id 15604 rev 2 1/20 20 rhf350 rad-hard 550 mhz low noise operational amplifier features bandwidth: 550 mhz (unity gain) quiescent current: 4.1 ma slew rate: 940 v/ s input noise: 1.5 nv/ hz distortion: sfdr = -66 dbc (10 mhz, 1v pp ) 2.8 v pp minimum output swing on 100 load for a +5 v supply 5 v power supply 300 krad mil-std-883 1019.7 eldrs free compliant sel immune at 125 c, let up to 110 mev.cm 2 /mg set characterized, let up to 110 mev.cm 2 /mg qmlv qualified under smd 5962-0723201 mass: 0.45 g applications communication satellites space data acquisition systems aerospace instrumentation nuclear and high energy physics harsh radiation environments adc drivers description the rhf350 is a current feedback operational amplifier that uses very high speed complementary technology to provide a bandwidth of up to 410 mhz while drawing only 4.1 ma of quiescent current. with a slew rate of 940 v/s and an output stage optimized for driving a standard 100 load, this circuit is highly suitable for applications where speed and power- saving are the main requirements. the device is a single operator available in a flat-8 hermetic ceramic package, saving board space as well as providing excellent thermal and dynamic performance. note: contact your st sales office for information on th e specific conditions for products in qml-q versions. pin connections (top view) nc +vcc nc out -vcc nc in - in + 1 4 8 5 table 1. device summary order code smd pin quality level package lead finish marking eppl packing rhf350k1 - engineering model flat-8 gold rhf350k1 - strip pack RHF350K-01V 5962f0723201vxc qmlv-flight flat-8 gold 5962f0723201vxc - www.st.com
contents rhf350 2/20 doc id 15604 rev 2 contents 1 absolute maximum ratings and operating conditions . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 3 power supply considerations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 3.1 single power supply . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 4 noise measurements . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 4.1 measurement of the input voltage noise en . . . . . . . . . . . . . . . . . . . . . . . 13 4.2 measurement of the negative input current noise inn . . . . . . . . . . . . . . . 13 4.3 measurement of the positive input current noise inp . . . . . . . . . . . . . . . . 13 5 intermodulation distortion produc t . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 6 inverting amplifier biasing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 7 active filtering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 8 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 8.1 ceramic flat-8 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 9 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
rhf350 absolute maximum ratings and operating conditions doc id 15604 rev 2 3/20 1 absolute maximum ratings and operating conditions table 2. absolute maximum ratings symbol parameter value unit v cc supply voltage (1) 1. all voltages values are measur ed with respect to the ground pin. 6v v id differential input voltage (2) 2. differential voltage are non-inverting input termi nal with respect to the inverting input terminal. +/-0.5 v v in input voltage range (3) 3. the magnitude of input and output voltage must never exceed v cc +0.3 v. +/-2.5 v t oper operating free-air temperature range -40 to + 85 c t stg storage temperature -65 to +150 c t j maximum junction temperature 150 c r thja flat-8 thermal resistance junction to ambient 50 c/w r thjc flat-8 thermal re sistance junction to case 30 c/w p max flat-8 maximum power dissipation (4) (t amb = 25 c) for t j = 150 c 4. short-circuits can cause excessive heating. destructive dissipation can result from sh ort-circuits on all amplifiers. 830 mw esd hbm: human body model (5) pins 1, 4, 5, 6, 7 and 8 pins 2 and 3 5. human body model: a 100 pf capacit or is charged to the specified voltage, then discharged through a 1.5 k resistor between two pins of the device. this is done for all couples of connected pin combinations while the other pins are floating. 2 0.5 kv mm: machine model (6) pins 1, 4, 5, 6, 7 and 8 pins 2 and 3 6. this is a minimum value. machine model: a 200 pf capacitor is charged to the specified voltage, then discharged directly between two pins of the device with no external series resistor (internal resistor < 5 ). this is done for all couples of connected pin combinations whil e the other pins are floating. 200 60 v cdm: charged device model (7) pins 1, 4, 5, 6, 7 and 8 pins 2 and 3 7. charged device model: all pins and package are ch arged together to the specified voltage and then discharged directly to t he ground through only one pin. 1.5 1.5 kv latch-up immunity 200 ma table 3. operating conditions symbol parameter value unit v cc supply voltage 4.5 to 5.5 v v icm common mode input voltage -v cc +1.5 v to +v cc -1.5 v v
electrical characteristics rhf350 4/20 doc id 15604 rev 2 2 electrical characteristics table 4. electrical characteristics for v cc = 2.5 v, (unless otherwise specified) symbol parameter test conditions temp. (1) min. typ. max. unit dc performance v io input offset voltage +125c tbd tbd mv +25c 0.35 0.8 4 -55c tbd tbd i ib+ non-inverting input bias current +125c tbd a +25c 12 35 -55c tbd i ib- inverting input bias current +125c tbd a +25c 1 20 -55c tbd cmr common mode rejection ratio 20 log ( v ic / v io ) v ic = 1 v +125c tbd db +25c 54 60 -55c tbd svr supply voltage rejection ratio 20 log ( v cc / v out ) v cc = 3.5 v to 5 v +125c 67 db +25c 68 81 -55c 67 psrr power supply rejection ratio 20 log ( v cc / v out ) v cc =200mv pp at 1 khz +25c 51 db i cc supply current no load +125c tbd ma +25c 4.1 4.9 -55c tbd dynamic performance and output characteristics r ol transimpedance v out = 1 v, r l = 1k +125c tbd k +25c 170 270 -55c tbd bw small signal -3 db bandwidth r l = 100 , a v = +1 +25c 550 mhz r l = 100 , a v = +2 +25c 390 r l = 100 , a v = +10 +25c 125 r l = 100 , a v = -2 +125c tbd +25c 250 370 -55c tbd
rhf350 electrical characteristics doc id 15604 rev 2 5/20 sr slew rate v out = 2 v pp , a v = +2, r l = 100 +25c 940 v/ s v oh high level output voltage r l = 100 +125c 1.5 v +25c 1.55 1.65 -55c 1.5 1. t min < t amb < t max : worst case of the parameter on a standard sample across the temperature range. the evaluation is done on 50 units in the so-8 plastic package. table 4. electrical characteristics for v cc = 2.5 v, (unless otherwise specified) (continued) symbol parameter test conditions temp. (1) min. typ. max. unit table 5. closed-loop gain and feedback components gain (v/v) + 1 - 1 + 2 - 2 + 10 - 10 r fb ( ) 820 300 300 300 300 300
electrical characteristics rhf350 6/20 doc id 15604 rev 2 figure 1. frequency response, positi ve gain figure 2. flatness, gain = +1 1m 10m 100m 1g -30 -25 -20 -15 -10 -5 0 5 10 15 20 25 gain=+1, rfb=820 gain=+2, rfb=300 , rg=300 gain=+4, rfb=300 , rg=100 small signal vcc=+5v load=100 gain=+10, rfb=300 , rg=33 gain (db) frequency (hz) 1m 10m 100m 1g -0.4 -0.2 0.0 0.2 0.4 small signal vcc=+5v gain=+1 load=100 gain (db) frequency (hz) figure 3. flatness, gain = +2 figure 4. flatness, gain = +4 1m 10m 100m 1g 5.6 5.8 6.0 6.2 6.4 small signal vcc=+5v gain=+2 load=100 gain (db) frequency (hz) 1m 10m 100m 1g 11.4 11.6 11.8 12.0 12.2 small signal vcc=+5v gain=+4 load=100 gain (db) frequency (hz) figure 5. flatness, gain = +10 figure 6. slew rate 1m 10m 100m 1g 19.4 19.6 19.8 20.0 20.2 small signal vcc=+5v gain=+10 load=100 gain (db) frequency (hz) -2ns -1ns 0s 1ns 2ns 0.00 0.25 0.50 0.75 1.00 1.25 1.50 gain=+2 vcc=+5v load=100 output response (v) time (ns)
rhf350 electrical characteristics doc id 15604 rev 2 7/20 figure 7. i sink figure 8. i source -2.0 -1.5 -1.0 -0.5 0.0 0 50 100 150 200 250 3 00 i s ink (ma) v (v) 0.0 0.5 1.0 1.5 2.0 - 3 00 -250 -200 -150 -100 -50 0 i s ource (ma) v (v) figure 9. input current noise vs. frequency figure 10. input voltage noise vs. frequency neg. current noise pos. current noise gain=+8.5 rg=100ohms rfb=750ohms non-inverting input in short-circuit vcc=5v gain=37db rg=10ohms rfb=750ohms non-inverting input in short-circuit vcc=5v figure 11. quiescent current vs. v cc figure 12. noise 0.0 0.5 1.0 1.5 2.0 2.5 -5 -4 -3 -2 -1 0 1 2 3 4 5 gain=+2 vcc=5v input to ground, no load icc (ma) icc(+) icc(-) vcc (v) vcc=5v
electrical characteristics rhf350 8/20 doc id 15604 rev 2 figure 13. distortion vs. output amplit ude figure 14. output amplitude vs. load hd3 hd2 gain=+2 vcc=+5v f=10mhz load=100 10 100 1k 10k 100k 2.0 2.5 3.0 3.5 4.0 gain=+2 vcc=5v load=100 max. output amplitude (vp-p) load (ohms) figure 15. reverse isolation vs. frequency figure 16. svr vs. temperature 1m 10m 100m 1g -100 -80 -60 -40 -20 0 small signal vcc=5v load=100 isolation (db) frequency (hz) -40 -20 0 20 40 60 80 100 120 50 55 60 65 70 75 80 85 90 vcc=5v load=100 svr (db) temperature (c) figure 17. i out vs. temperature figure 18. r ol vs. temperature -40 -20 0 20 40 60 80 100 120 -1000 -800 -600 -400 -200 0 200 400 600 800 1000 output: short-circuit vcc=5v iout (ma) isource isink temperature (c) -40 -20 0 20 40 60 80 100 120 200 220 240 260 280 300 320 340 open loop vcc=5v r ol (m ) temperature (c)
rhf350 electrical characteristics doc id 15604 rev 2 9/20 figure 19. cmr vs. temperature figure 20. i bias vs. temperature -40 -20 0 20 40 60 80 100 120 50 52 54 56 58 60 62 64 66 68 70 vcc=5v load=100 cmr (db) temperature (c) -40 -20 0 20 40 60 80 100 120 -4 -2 0 2 4 6 8 10 12 14 gain=+2 vcc=5v load=100 i bias ( a) ib(+) ib(?) temperature (c) figure 21. v io vs. temperature figure 22. v oh and v ol vs. temperature figure 23. i cc vs. temperature -40 -20 0 20 40 60 80 100 120 0 200 400 600 800 1000 open loop vcc=5v load=100 temperature ( c) v io (micro v) -40-20 0 20406080 -5 -4 -3 -2 -1 0 1 2 gain=+2 vcc=5v load=100 v ol v oh v oh & ol (v) temperature (c) -40 -20 0 20 40 60 80 100 120 -10 -8 -6 -4 -2 0 2 4 6 gain=+2 vcc=5v no load in+/in- to gnd icc(+) icc(-) temperature ( c) i cc (ma)
power supply considerations rhf350 10/20 doc id 15604 rev 2 3 power supply considerations correct power supply bypassing is very important to optimize performance in high- frequency ranges. the bypass capacitors should be placed as close as possible to the ic pins to improve high-frequency bypa ssing. a capacitor greater than 1 f is necessary to minimize the distortion. for better quality by passing, a 10 nf capacitor can be added. it should also be placed as close as possible to the ic pins. the bypass capacitors must be incorporated for both the negative and positive supply. figure 24. circuit for power supply bypassing 3.1 single power supply in the event that a single supply system is us ed, biasing is necessary to obtain a positive output dynamic range between the 0 v and +v cc supply rails. considering the values of v oh and v ol , the amplifier provides an output swing from +0.9 v to +4.1 v on a 100 load. the amplifier must be biased wi th a mid-supply (nominally +v cc /2), in order to maintain the dc component of the signal at this value. several options are possible to provide this bias supply, such as a virtual ground using an operational amplifier or a two-resistance divider (which is the cheapest solution). a high resistance value is required to limit the current consumption. on the other hand, the current mu st be high enough to bias the non-inverting input of the amplifier. if we consider this bias current (35 a maximum) as 1% of the current through the resistance divider, to keep a stable mid-supply two resistances of 750 can be used. the input provides a high-pass filter with a break frequency below 10 hz which is necessary to remove the original 0 v dc component of the input signal, and to set it at +v cc /2. figure 25 on page 11 illustrates a 5 v single power supp ly configuration. a capacitor c g is added to the gain network to ensure a unity gain at low frequencies in order to keep the right dc component at the output. c g contributes to a high -pass filter with r fb //r g and its value is calculated with regard to the cut-off frequency of this low-pass filter. + +v cc 10 f + 10 nf 10 f + 10 nf - -v cc am00 83 5
rhf350 power supply considerations doc id 15604 rev 2 11/20 figure 25. circuit for +5 v single supply + _ r2 750 r g in +5 v 100 out r f b 10 f + 1 f 100 f r1 750 +5 v 10 nf r in 1 k c g + am00 8 44
noise measurements rhf350 12/20 doc id 15604 rev 2 4 noise measurements the noise model is shown in figure 26 . en: input voltage noise of the amplifier. inn: negative input current noise of the amplifier. inp: positive input current noise of the amplifier. figure 26. noise model the thermal noise of a resistance r is: where f is the specified bandwidth. on a 1 hz bandwidth the thermal noise is reduced to: where k is the boltzmann's constant, equal to 1,374.e(-23)j/k. t is the temperature (k). the output noise eno is calcul ated using the superposition theorem. however, eno is not the simple sum of all noise sources, but rather the square root of the sum of the square of each noise source, as shown in equation 1 . equation 1 + _ r 3 r1 o u tp u t r2 in - in + hp 3 577 inp u t noi s e: 8 nv/ hz n1 n2 n 3 en am00 83 7 4ktr f 4ktr eno v1 2 v2 2 v3 2 v4 2 v5 2 v6 2 +++++ =
rhf350 noise measurements doc id 15604 rev 2 13/20 equation 2 the input noise of the instrumentation must be extracted from the measured noise value. the real output noise value of the driver is: equation 3 the input noise is called equivalent input noise because it is not dire ctly measured but is evaluated from the measurement of the output divided by the closed loop gain (eno/g). after simplification of the fourth and the fifth term of equation 2 we obtain: equation 4 4.1 measurement of the input voltage noise en if we assume a short-circuit on the non-inverting input (r3=0), from equation 4 we can derive: equation 5 in order to easily extract the va lue of en, the resistance r2 w ill be chosen to be as low as possible. on the other hand, the gain must be large enough. r3=0, gain: g=100 4.2 measurement of the negative input current noise inn to measure the negative input current noise inn, we set r3=0 and use equation 5 . this time, the gain must be lower in order to decrease the thermal noise contribution. r3=0, gain: g=10 4.3 measurement of the positive input current noise inp to extract inp from equation 3 , a resistance r3 is connected to the non-inverting input. the value of r3 must be chosen in order to keep its thermal noise contribution as low as possible against the inp contribution. r3=100 w, gain: g=10 eno 2 en 2 g 2 inn 2 r2 2 inp 2 + + r3 2 g 2 r2 r1 ------- - 2 4ktr1 4ktr2 1 r2 r1 ------- - + 2 4ktr3 ++ + = eno measured () 2 instrumentation () 2 ? = eno 2 en 2 g 2 inn 2 r2 2 inp 2 + + r3 2 g 2 g4ktr21 r2 r1 ------- - + 2 4ktr3 + + = eno en 2 g 2 inn 2 r2 2 g4ktr2 + + =
intermodulation distortion product rhf350 14/20 doc id 15604 rev 2 5 intermodulation distortion product the non-ideal output of the amplifier can be described by the following series of equations. where the input is v in =asin t, c 0 is the dc component, c 1 (v in ) is the fundamental and c n is the amplitude of the harmonic s of the output signal v out . a one-frequency (one-tone) input signal contributes to harmonic distortion. a two-tone input signal contributes to harmonic distorti on and to the intermodulation product. the study of the intermodulation and distortion fo r a two-tone input signal is the first step in characterizing the driving capab ility of multi-tone input signals. in this case: then: from this expression, we can extract the distortion terms, and the intermodulation terms from a single sine wave. second-order intermodulation terms im2 by the frequencies ( 1 - 2 ) and ( 1 + 2 ) with an amplitude of c2a 2 . third-order intermodulation terms im3 by the frequencies (2 1 - 2 ), (2 1 + 2 ), ( ? 1 +2 2 ) and ( 1 + 2 2 ) with an amplitude of (3/4)c3a 3 . the intermodulation product of the driver is measured by using the driver as a mixer in a summing amplifier configuration ( figure 27 ). in this way, the non-linearity problem of an external mixing device is avoided. figure 27. inverting summing amplifier v out c 0 c 1 v in c 2 v 2 in c + n v n in ++ + = v in a 1 t sin a 2 t sin + = v out c 0 c 1 a 1 t sin a 2 t sin + () c 2 a 1 t sin a 2 t sin + () 2 c n a 1 t sin a 2 t sin + () n ++ + = + _ r r fb 100 v out r 2 v in2 v in1 r 1 + _ r r fb 100 v out r 2 v in2 v in1 r 1
rhf350 inverting amplifier biasing doc id 15604 rev 2 15/20 6 inverting amplifier biasing a resistance is necessary to achieve good input biasing, such as resistance r shown in figure 28 . the value of this resistance is calculated from the negative and positive input bias current. the aim is to compensate for the offset bias cu rrent, which can affect the input offset voltage and the output dc component. assuming i ib- , i ib+ , r in , r fb and a 0 v output, the resistance r is: figure 28. compensation of the input bias current r r in r fb r in r + fb ------------------------ = r lo a d o u tp u t r f b r in i i b - i i b + v cc + v cc - + _ am00 83 9
active filtering rhf350 16/20 doc id 15604 rev 2 7 active filtering figure 29. low-pass active filtering, sallen-key from the resistors r fb and r g we can directly calculate the gain of the filter in a classic non- inverting amplificat ion configuration. we assume the following expression is the response of the system. the cut-off frequency is not gain-dependent and so becomes: the damping factor is calculated by the following expression. the higher the gain, the more sensitive the dampi ng factor is. when the gain is higher than 1, it is preferable to use very stable resistor and capacitor values. in the case of r1=r2=r: due to a limited selection of capacitor values in comparison with resistor values, we can set c1=c2=c, so that: + _ r g in r f b 100 out r 1 r 2 c2 c1 am00 8 40 a v g1 r fb r g -------- + == t j vout j vin j ---------------- - g 12 j c ----- j () 2 c 2 ----------- - ++ ---------------------------------------- - == c 1 r1r2c1c2 ------------------------------------ - = 1 2 -- - c c 1 r 1 c 1 r 2 c 2 r 1 c 1 r 1 g ? ++ () = 2c 2 c 1 r fb r g -------- ? 2c 1 c 2 -------------------------------- - = 2r 2 r 1 r fb r g -------- ? 2r 1 r 2 -------------------------------- - =
rhf350 package information doc id 15604 rev 2 17/20 8 package information in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions an d product status are available at: www.st.com . ecopack ? is an st trademark.
package information rhf350 18/20 doc id 15604 rev 2 8.1 ceramic flat-8 package information figure 30. ceramic flat-8 package mechanical drawing table 6. ceramic flat-8 package mechanical data ref. dimensions millimeters inches min. typ. max. min. typ. max. a 2.24 2.44 2.64 0.088 0.096 0.104 b 0.38 0.43 0.48 0.015 0.017 0.019 c 0.10 0.13 0.16 0.004 0.005 0.006 d 6.35 6.48 6.61 0.250 0.255 0.260 e 6.35 6.48 6.61 0.250 0.255 0.260 e2 4.32 4.45 4.58 0.170 0.175 0.180 e3 0.88 1.01 1.14 0.035 0.040 0.045 e 1.27 0.050 l 3.00 0.118 q 0.66 0.79 0.92 0.026 0.031 0.092 s1 0.92 1.12 1.32 0.036 0.044 0.052 n08 08
rhf350 revision history doc id 15604 rev 2 19/20 9 revision history table 7. document revision history date revision changes 20-may-2009 1 initial release. 12-jul-2010 2 added mass in features on cover page. added table 1: device summary on cover page, with full ordering information. changed temperature limits in ta b l e 4 .
rhf350 20/20 doc id 15604 rev 2 please read carefully: information in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st ?) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described he rein at any time, without notice. all st products are sold pursuant to st?s terms and conditions of sale. purchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st as sumes no liability whatsoever relating to the choice, selection or use of the st products and services described herein. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. i f any part of this document refers to any third party products or services it shall not be deemed a license grant by st for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoev er of such third party products or services or any intellectual property contained therein. unless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implied warranty with respect to the use and/or sale of st products including without limitation implied warranties of merchantability, fitness for a parti cular purpose (and their equivalents under the laws of any jurisdiction), or infringement of any patent, copyright or other intellectual property right. unless expressly approved in writing by an authorized st representative, st products are not recommended, authorized or warranted for use in milita ry, air craft, space, life saving, or life sustaining applications, nor in products or systems where failure or malfunction may result in personal injury, death, or severe property or environmental damage. st products which are not specified as "automotive grade" may only be used in automotive applications at user?s own risk. resale of st products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoev er, any liability of st. st and the st logo are trademarks or registered trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2010 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - philippines - singapore - spain - sweden - switzerland - united kingdom - united states of america www.st.com

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